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SI1401EDH-T1-GE3
Power MOSFET, P Channel, 12 V, 4 A, 0.034 ohm, SOT-363, Surface Mount
22,400 有存貨
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22400 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$20.520 |
| 10+ | NT$12.660 |
| 100+ | NT$8.120 |
| 500+ | NT$6.200 |
| 1000+ | NT$4.740 |
| 5000+ | NT$4.350 |
價格Each
最少: 5
多項: 5
NT$102.60
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI1401EDH-T1-GE3
訂購代碼2335277
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id4A
Drain Source On State Resistance0.034ohm
Transistor Case StyleSOT-363
Transistor MountingSurface Mount
Rds(on) Test Voltage1.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation2.8W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SI1401EDH-T1-GE3 is a 12VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch, PA switch and battery switch applications.
- 1500V ESD performance
- Halogen-free
- 100% Rg tested
- -55 to 150°C Operating temperature range
應用
Industrial, Power Management, Portable Devices
技術規格
Channel Type
P Channel
Continuous Drain Current Id
4A
Transistor Case Style
SOT-363
Rds(on) Test Voltage
1.5V
Power Dissipation
2.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.034ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005