列印頁面
SI1539CDL-T1-GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 700 mA, 700 mA, 0.323 ohm
33,000 有存貨
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33000 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 3000+ | NT$4.130 |
| 9000+ | NT$3.820 |
價格Each (Supplied on Full Reel)
最少: 3000
多項: 3000
NT$12,390.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI1539CDL-T1-GE3
訂購代碼3879342
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel700mA
Continuous Drain Current Id P Channel700mA
Drain Source On State Resistance N Channel0.323ohm
Drain Source On State Resistance P Channel0.323ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel340mW
Power Dissipation P Channel340mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
700mA
Drain Source On State Resistance P Channel
0.323ohm
No. of Pins
6Pins
Power Dissipation P Channel
340mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
700mA
Drain Source On State Resistance N Channel
0.323ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
340mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000005