列印頁面
SI1958DH-T1-E3
Dual MOSFET, N Channel, 20 V, 1.3 A, 0.165 ohm
不再生產
產品訊息
製造商VISHAY
製造商產品編號SI1958DH-T1-E3
訂購代碼1497604RL
技術資料表
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id1.3A
On Resistance Rds(on)0.165ohm
Continuous Drain Current Id N Channel1.3A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.6V
No. of Pins6Pins
Power Dissipation Pd1.25W
Power Dissipation N Channel1.25W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
技術規格
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.165ohm
Continuous Drain Current Id P Channel
-
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.6V
Power Dissipation Pd
1.25W
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
1.3A
Continuous Drain Current Id N Channel
1.3A
Transistor Mounting
Surface Mount
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000135