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SI1967DH-T1-GE3
Dual MOSFET, P Channel, 20 V, 20 V, 1.3 A, 1.3 A, 0.64 ohm
21,420 有存貨
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21420 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$21.600 |
| 10+ | NT$13.320 |
| 100+ | NT$8.540 |
| 500+ | NT$6.520 |
| 1000+ | NT$4.980 |
| 5000+ | NT$4.420 |
價格Each
最少: 5
多項: 5
NT$108.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI1967DH-T1-GE3
訂購代碼2335282
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel1.3A
Continuous Drain Current Id P Channel1.3A
Drain Source On State Resistance N Channel0.64ohm
Drain Source On State Resistance P Channel0.64ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SI1967DH-T1-GE3 is a dual P-channel MOSFET intended for small to medium load applications where a miniaturized package is required. It is compatible with load switch for portable applications.
- Halogen-free
- PWM optimized
應用
Industrial, Portable Devices, Power Management
技術規格
Channel Type
P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
1.3A
Drain Source On State Resistance P Channel
0.64ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.25W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
1.3A
Drain Source On State Resistance N Channel
0.64ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
SI1967DH-T1-GE3 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005