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SI2302CDS-T1-GE3
MOSFET, N, SOT-23
64,378 有存貨
12,000 即日起您可預購補貨
64378 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$15.180 |
| 50+ | NT$12.510 |
| 100+ | NT$9.830 |
| 500+ | NT$6.720 |
| 1500+ | NT$6.690 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$75.90
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI2302CDS-T1-GE3
訂購代碼1684049
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.9A
Drain Source On State Resistance0.057ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage8V
Gate Source Threshold Voltage Max850mV
Power Dissipation710mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SI2302CDS-T1-GE3 is a 20V N-channel TrenchFET® power MOSFET for use in load switching for portable devices.
- ±8V Gate to source voltage
應用
Power Management, Portable Devices
技術規格
Channel Type
N Channel
Continuous Drain Current Id
2.9A
Transistor Case Style
TO-236
Rds(on) Test Voltage
8V
Power Dissipation
710mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.057ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
850mV
No. of Pins
3Pins
Product Range
-
MSL
-
SI2302CDS-T1-GE3 的替代選擇
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：United States
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000008