列印頁面
SI2307CDS-T1-GE3
Power MOSFET, P Channel, 30 V, 3.5 A, 0.088 ohm, SOT-23, Surface Mount
20,326 有存貨
15,000 即日起您可預購補貨
20326 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$14.230 |
| 50+ | NT$12.060 |
| 100+ | NT$9.880 |
| 500+ | NT$6.620 |
| 1500+ | NT$6.490 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$71.15
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI2307CDS-T1-GE3
訂購代碼1779262
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.5A
Drain Source On State Resistance0.088ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation1.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SI2307CDS-T1-GE3 is a -30V P-channel TrenchFET® Power MOSFET. Suitable for use in load switch for portable devices. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
應用
Power Management, Portable Devices
技術規格
Channel Type
P Channel
Continuous Drain Current Id
3.5A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
1.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.088ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
SI2307CDS-T1-GE3 的替代選擇
找到 5 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000136