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SI2333DDS-T1-GE3
MOSFET, P-CH, 12V, SOT23
產品訊息
製造商VISHAY
製造商產品編號SI2333DDS-T1-GE3
訂購代碼2283650
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id6A
Drain Source On State Resistance0.028ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SI2333DDS-T1-GE3 is a 12VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications.
- 100% Rg tested
- -55 to 150°C Operating temperature range
- Halogen-free
應用
Industrial, Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
6A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.028ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Product Range
-
MSL
-
SI2333DDS-T1-GE3 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.00012