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SI2333DS-T1-E3
Power MOSFET, P Channel, 12 V, 5.3 A, 0.032 ohm, TO-236, Surface Mount
可供訂購
製造商標準交貨時間：17 週
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| 數量 | 價格 |
|---|---|
| 1+ | NT$37.140 |
| 10+ | NT$26.410 |
| 100+ | NT$20.900 |
| 500+ | NT$16.990 |
| 1000+ | NT$15.170 |
| 5000+ | NT$14.270 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$37.14
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI2333DS-T1-E3
訂購代碼1470108
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id5.3A
Drain Source On State Resistance0.032ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
The SI2333DS-T1-E3 is a -12V P-channel TrenchFET® Power MOSFET. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
應用
Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
5.3A
Transistor Case Style
TO-236
Rds(on) Test Voltage
4.5V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.032ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
SI2333DS-T1-E3 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
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產品合規憑證
重量 (公斤)：.0001