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SI3473DDV-T1-GE3
Power MOSFET, P Channel, 12 V, 8 A, 0.0145 ohm, TSOP, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SI3473DDV-T1-GE3
訂購代碼2932887
Product RangeTrenchFET Gen III
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id8A
Drain Source On State Resistance0.0145ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation3.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III
Qualification-
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
P Channel
Continuous Drain Current Id
8A
Transistor Case Style
TSOP
Rds(on) Test Voltage
4.5V
Power Dissipation
3.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.0145ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Product Range
TrenchFET Gen III
MSL
MSL 1 - Unlimited
SI3473DDV-T1-GE3 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.002