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SI3552DV-T1-E3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.5 A, 2.5 A, 0.085 ohm
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產品訊息
製造商VISHAY
製造商產品編號SI3552DV-T1-E3
訂購代碼2646377
Product RangeTrenchFET Series
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel2.5A
Drain Source On State Resistance N Channel0.085ohm
Drain Source On State Resistance P Channel0.085ohm
Transistor Case StyleTSOP
No. of Pins6Pins
Power Dissipation N Channel1.15W
Power Dissipation P Channel1.15W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance P Channel
0.085ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.15W
Product Range
TrenchFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
2.5A
Drain Source On State Resistance N Channel
0.085ohm
Transistor Case Style
TSOP
Power Dissipation N Channel
1.15W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000129