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SI3590DV-T1-GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.5 A, 2.5 A, 0.062 ohm
不再生產
產品訊息
製造商VISHAY
製造商產品編號SI3590DV-T1-GE3
訂購代碼2056715RL
技術資料表
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id2.5A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel2.5A
On Resistance Rds(on)0.062ohm
Continuous Drain Current Id P Channel2.5A
Drain Source On State Resistance N Channel0.062ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.062ohm
Rds(on) Test Voltage4.5V
Transistor Case StyleTSOP
Gate Source Threshold Voltage Max1.5V
Power Dissipation Pd830mW
No. of Pins6Pins
Power Dissipation N Channel830mW
Power Dissipation P Channel830mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (21-Jan-2025)
產品總覽
The SI3590DV-T1-GE3 is a 30V Dual N and P-channel TrenchFET® Power MOSFET. Ultra low RDS(on) for high Efficiency and optimized for high side and low side operation. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- Low conduction losses
應用
Power Management
技術規格
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
2.5A
Continuous Drain Current Id N Channel
2.5A
Continuous Drain Current Id P Channel
2.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
6Pins
Power Dissipation P Channel
830mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.062ohm
Drain Source On State Resistance N Channel
0.062ohm
Drain Source On State Resistance P Channel
0.062ohm
Transistor Case Style
TSOP
Power Dissipation Pd
830mW
Power Dissipation N Channel
830mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
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產品合規憑證
重量 (公斤)：.000045