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SI4459ADY-T1-GE3
Power MOSFET, P Channel, 30 V, 29 A, 5000 µohm, SOIC, Surface Mount
6,852 有存貨
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6852 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$42.260 |
| 500+ | NT$35.490 |
| 1000+ | NT$35.440 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 1
NT$4,226.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI4459ADY-T1-GE3
訂購代碼1858953RL
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id29A
Drain Source On State Resistance5000µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation3.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
產品總覽
- 30V, 29A, P-channel TrenchFET® power MOSFET in 8 pin SOIC package
- 100 % Rg and UIS tested
- Suitable for adaptor switch and notebook
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
29A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
3.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
5000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
SI4459ADY-T1-GE3 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536