列印頁面
SI4465ADY-T1-E3
Power MOSFET, P Channel, 8 V, 13.7 A, 9000 µohm, SOIC, Surface Mount
9,380 有存貨
需要更多？
9380 件可于 3-4 個工作日後配送(英國 件庫存)
存貨供應完畢便停止銷售
| 數量 | 價格 |
|---|---|
| 1+ | NT$89.650 |
| 10+ | NT$62.610 |
| 100+ | NT$45.310 |
| 500+ | NT$40.100 |
| 1000+ | NT$35.410 |
| 5000+ | NT$30.330 |
價格Each
最少: 1
多項: 1
NT$89.65
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI4465ADY-T1-E3
訂購代碼2335314
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id13.7A
Drain Source On State Resistance9000µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max450mV
Power Dissipation6.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
產品總覽
- P-channel 1.8-V (G-S) TrenchFET® power MOSFET
- 100% Rg tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
13.7A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
6.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
8V
Drain Source On State Resistance
9000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
450mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000138