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SI4599DY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 6.8 A, 6.8 A, 0.0295 ohm
4,618 有存貨
2,500 即日起您可預購補貨
4618 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 100+ | NT$19.820 |
| 500+ | NT$15.620 |
| 1000+ | NT$14.080 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$1,982.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI4599DY-T1-GE3
訂購代碼1779270RL
技術資料表
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds40V
Continuous Drain Current Id6.8A
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel6.8A
On Resistance Rds(on)0.0295ohm
Continuous Drain Current Id P Channel6.8A
Drain Source On State Resistance N Channel0.0295ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.0295ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.4V
Transistor Case StyleSOIC
Power Dissipation Pd3W
No. of Pins8Pins
Power Dissipation N Channel3W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SI4599DY-T1-GE3 is a 40V Dual N and P-channel TrenchFET® Power MOSFET. Suitable for backlight inverter for LCD display and full bridge converter applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
應用
Power Management
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
6.8A
Continuous Drain Current Id N Channel
6.8A
Continuous Drain Current Id P Channel
6.8A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
On Resistance Rds(on)
0.0295ohm
Drain Source On State Resistance N Channel
0.0295ohm
Drain Source On State Resistance P Channel
0.0295ohm
Gate Source Threshold Voltage Max
1.4V
Power Dissipation Pd
3W
Power Dissipation N Channel
3W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000126