列印頁面
SI4947ADY-T1-E3
Dual MOSFET, P Channel, 30 V, 3 A
不再生產
產品訊息
製造商VISHAY
製造商產品編號SI4947ADY-T1-E3
訂購代碼1612651RL
技術資料表
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id3A
On Resistance Rds(on)0.062ohm
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel3A
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
Power Dissipation Pd1.2W
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel1.2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SI4947ADY-T1-E3 的替代選擇
找到 2 個產品
技術規格
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.062ohm
Continuous Drain Current Id P Channel
3A
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Power Dissipation P Channel
1.2W
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id
3A
Continuous Drain Current Id N Channel
-
Transistor Mounting
Surface Mount
Transistor Case Style
SOIC
Power Dissipation Pd
1.2W
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001