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SI7456DP-T1-GE3
Power MOSFET, N Channel, 100 V, 5.7 A, 0.025 ohm, PowerPAK SO, Surface Mount
4,322 有存貨
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| 數量 | 價格 |
|---|---|
| 100+ | NT$49.900 |
| 500+ | NT$45.030 |
| 1500+ | NT$40.160 |
價格Each (Supplied on Cut Tape)
最少: 100
多項: 5
NT$4,990.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI7456DP-T1-GE3
訂購代碼9550704RL
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id5.7A
Drain Source On State Resistance0.025ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (10-Jun-2022)
SI7456DP-T1-GE3 的替代選擇
找到 2 個產品
產品總覽
The SI7456DP-TI-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, telecom/server and full/half-bridge DC-to-DC applications.
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- PWM optimized
- Fast switching
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
應用
Industrial, Power Management, Communications & Networking, Automotive
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
5.7A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (10-Jun-2022)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (10-Jun-2022)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000108