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SI7852DP-T1-GE3
Power MOSFET, N Channel, 80 V, 12.5 A, 0.0165 ohm, PowerPAK SO, Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$98.000 |
| 10+ | NT$80.410 |
| 100+ | NT$57.170 |
| 500+ | NT$51.200 |
| 1000+ | NT$49.320 |
價格Each
最少: 1
多項: 1
NT$98.00
品項附註
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產品訊息
製造商VISHAY
製造商產品編號SI7852DP-T1-GE3
訂購代碼2283668
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id12.5A
Drain Source On State Resistance0.0165ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
產品總覽
- N-channel 80V (D-S) TrenchFET® power MOSFET
- Low thermal resistance PowerPAK® package with Low 1.07mm profile
- PWM optimized for fast switching
- 100 % Rg tested
- Used in primary side switch for DC/DC applications
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
12.5A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0165ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (21-Jan-2025)
SI7852DP-T1-GE3 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536