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SI7949DP-T1-E3
Dual MOSFET, P Channel, 60 V, 60 V, 3.2 A, 3.2 A, 0.051 ohm
10,903 有存貨
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10903 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$50.230 |
| 50+ | NT$42.190 |
| 100+ | NT$34.150 |
| 500+ | NT$26.230 |
| 1500+ | NT$25.710 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$251.15
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SI7949DP-T1-E3
訂購代碼2101481
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel3.2A
Continuous Drain Current Id P Channel3.2A
Drain Source On State Resistance N Channel0.051ohm
Drain Source On State Resistance P Channel0.051ohm
Transistor Case StylePowerPAK
No. of Pins8Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
產品總覽
The SI7949DP-T1-E3 is a dual P-channel MOSFET housed in a surface-mount package.
- TrenchFET® power MOSFET
- New low thermal resistance PowerPAK® package with low 1.07mm profile
應用
Industrial, Power Management
技術規格
Channel Type
P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
3.2A
Drain Source On State Resistance P Channel
0.051ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.5W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
3.2A
Drain Source On State Resistance N Channel
0.051ohm
Transistor Case Style
PowerPAK
Power Dissipation N Channel
1.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
SI7949DP-T1-E3 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000635