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SI8483DB-T2-E1
Power MOSFET, P Channel, 12 V, 16 A, 0.026 ohm, MICRO FOOT, Surface Mount
產品訊息
製造商VISHAY
製造商產品編號SI8483DB-T2-E1
訂購代碼2283651
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id16A
Drain Source On State Resistance0.026ohm
Transistor Case StyleMICRO FOOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation13W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
P-channel 12V (D-S) MOSFET suitable for use in load switch for smart phones, tablet PCs and mobile computing.
- TrenchFET® power MOSFET
- Ultra-small outline
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
16A
Transistor Case Style
MICRO FOOT
Rds(on) Test Voltage
4.5V
Power Dissipation
13W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000053