列印頁面
SI9407BDY-T1-GE3
Power MOSFET, P Channel, 60 V, 4.7 A, 0.12 ohm, SOIC, Surface Mount
產品訊息
製造商VISHAY
製造商產品編號SI9407BDY-T1-GE3
訂購代碼2101454
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id4.7A
Drain Source On State Resistance0.12ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
產品總覽
The SI9407BDY-T1-GE3 is a -60V P-channel TrenchFET® Power MOSFET. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
應用
Power Management
技術規格
Channel Type
P Channel
Continuous Drain Current Id
4.7A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.12ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
SI9407BDY-T1-GE3 的替代選擇
找到 2 個產品
相關產品
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000564