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SIA923EDJ-T1-GE3
Dual MOSFET, P Channel, 20 V, 20 V, 4.5 A, 4.5 A, 0.044 ohm
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產品訊息
製造商VISHAY
製造商產品編號SIA923EDJ-T1-GE3
訂購代碼3772814RL
Product RangeTrench Series
技術資料表
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id4.5A
Continuous Drain Current Id N Channel4.5A
On Resistance Rds(on)0.044ohm
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel0.044ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.044ohm
Gate Source Threshold Voltage Max500mV
Transistor Case StylePowerPAK SC-70
No. of Pins6Pins
Power Dissipation Pd7.8W
Power Dissipation N Channel7.8W
Power Dissipation P Channel7.8W
Operating Temperature Max150°C
Product RangeTrench Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
技術規格
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
4.5A
Continuous Drain Current Id P Channel
4.5A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.044ohm
Transistor Case Style
PowerPAK SC-70
Power Dissipation Pd
7.8W
Power Dissipation P Channel
7.8W
Product Range
Trench Series
Automotive Qualification Standard
-
Channel Type
P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
4.5A
On Resistance Rds(on)
0.044ohm
Drain Source On State Resistance N Channel
0.044ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
500mV
No. of Pins
6Pins
Power Dissipation N Channel
7.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001