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可供訂購
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| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 100 | NT$17.600 | NT$1,760.00 | |
| 總計 價格 | NT$1,760.00 | ||
複捲式
| 數量 | 價格 |
|---|---|
| 100+ | NT$17.600 |
| 500+ | NT$10.210 |
| 1500+ | NT$10.010 |
整卷
| 數量 | 價格 |
|---|---|
| 3000+ | NT$9.160 |
| 9000+ | NT$8.980 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIA931DJ-T1-GE3复制
製造商標準前置時間32 週
訂購代碼
整卷4384471
複捲式2400374RL
2400374
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel0.052ohm
Drain Source On State Resistance P Channel0.052ohm
Transistor Case StylePowerPAK SC-70
No. of Pins6Pins
Power Dissipation N Channel7.8W
Power Dissipation P Channel7.8W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
產品總覽
The SIA931DJ-T1-GE3 is a dual P-channel MOSFET housed in a surface-mount package. It is suitable for battery and load switch, DC-to-DC converter applications.
- Halogen-free
- TrenchFET® gen III power MOSFET
- Thermally enhanced PowerPAK® package
- Small footprint
- Low ON-resistance
- 100% Rg tested
應用
Industrial, Power Management, Computers & Computer Peripherals
技術規格
Channel Type
P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance P Channel
0.052ohm
No. of Pins
6Pins
Power Dissipation P Channel
7.8W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
4.5A
Drain Source On State Resistance N Channel
0.052ohm
Transistor Case Style
PowerPAK SC-70
Power Dissipation N Channel
7.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Israel
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤):.002
