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SIHB22N60E-GE3
Power MOSFET, N Channel, 600 V, 21 A, 0.18 ohm, TO-263 (D2PAK), Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$169.370 |
| 10+ | NT$111.490 |
| 100+ | NT$88.800 |
| 500+ | NT$78.930 |
| 1000+ | NT$67.430 |
價格Each
最少: 1
多項: 1
NT$169.37
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIHB22N60E-GE3
訂購代碼2079772
Product RangeE
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id21A
Drain Source On State Resistance0.18ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation227W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
SVHCLead (21-Jan-2025)
產品總覽
E series power MOSFET suitable for use in server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), lighting (High-intensity discharge (HID), fluorescent ballast lighting), industrial (welding, induction heating, motor drives, battery chargers, renewable energy and solar (PV inverters).
- Low figure-of-merit (FOM) Ron x Qi
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra-low gate charge (Qi)
- Avalanche energy rated (UIS)
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
21A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
227W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
E
MSL
MSL 1 - Unlimited
SIHB22N60E-GE3 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00143