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SIHB33N60E-GE3
Power MOSFET, N Channel, 600 V, 33 A, 0.099 ohm, TO-263 (D2PAK), Surface Mount
600 有存貨
需要更多？
600 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$239.910 |
| 10+ | NT$162.030 |
| 100+ | NT$117.660 |
| 500+ | NT$105.500 |
| 1000+ | NT$103.390 |
價格Each
最少: 1
多項: 1
NT$239.91
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIHB33N60E-GE3复制
製造商標準前置時間32 週
訂購代碼
EACH 2364072
EACH 2364072RL
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id33A
Drain Source On State Resistance0.099ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation278W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
產品總覽
The SIHB33N60E-GE3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
- Low figure-of-merit(FOM) RON x Qg
- Low input capacitance (CISS)
- Reduced switching and conduction losses
- Ultra low gate charge
- Avalanche energy rated
- Halogen-free
應用
Industrial, Power Management, Communications & Networking, Lighting, Portable Devices, Computers & Computer Peripherals, Alternative Energy, Motor Drive & Control
技術規格
Channel Type
N Channel
Continuous Drain Current Id
33A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
278W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.099ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (04-Feb-2026)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001451