列印頁面
SIHP080N60E-GE3
Power MOSFET, N Channel, 600 V, 35 A, 0.08 ohm, TO-220AB, Through Hole
圖片僅供舉例說明。 請參閱產品描述。
672 有存貨
需要更多？
672 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$115.740 |
| 10+ | NT$94.120 |
| 100+ | NT$76.340 |
| 500+ | NT$72.230 |
價格Each
最少: 1
多項: 1
NT$115.74
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIHP080N60E-GE3
訂購代碼3677861
Product RangeE
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id35A
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation227W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
SVHCLead (07-Nov-2024)
產品總覽
E Series power MOSFET in 3 pin TO-220AB package is typically used in applications like server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), lighting (high-intensity discharge (HID), fluorescent ballast lighting), industrial (welding, induction heating, motor drives, battery chargers and solar (PV inverters)).
- 4th generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
35A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
227W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.08ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
E
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (07-Nov-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00304