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SIR401DP-T1-GE3
Power MOSFET, P Channel, 20 V, 50 A, 0.0025 ohm, PowerPAK SO, Surface Mount
5,839 有存貨
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5839 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$35.700 |
| 10+ | NT$24.780 |
| 100+ | NT$17.500 |
| 500+ | NT$14.520 |
| 1000+ | NT$14.460 |
| 5000+ | NT$14.400 |
價格Each
最少: 1
多項: 1
NT$35.70
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產品訊息
製造商VISHAY
製造商產品編號SIR401DP-T1-GE3
訂購代碼2283664
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0025ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max600mV
Power Dissipation39W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
產品總覽
The SIR401DP-T1-GE3 is a -20V P-channel TrenchFET® Power MOSFET. Suitable for adapter and battery switch applications. The P-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
應用
Power Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
P Channel
Continuous Drain Current Id
50A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
39W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
SIR401DP-T1-GE3 的替代選擇
找到 1 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000272