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SIR500DP-T1-RE3
Power MOSFET, N Channel, 30 V, 350.8 A, 470 µohm, PowerPAK SO, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SIR500DP-T1-RE3
訂購代碼3677848
Product RangeTrenchFET Gen V
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id350.8A
Drain Source On State Resistance470µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation104.1W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen V
Qualification-
SVHCLead (21-Jan-2025)
產品總覽
N-channel 30V (D-S) 150°C MOSFET in PowerPAK SO-8 package is typically used in DC/DC converter, POL, synchronous rectification, battery management, power and load switch applications.
- TrenchFET® Gen V power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Enables higher power density with very low RDS(on) and thermally enhanced compact package
- 100% Rg and UIS tested
技術規格
Channel Type
N Channel
Continuous Drain Current Id
350.8A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
104.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
470µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
TrenchFET Gen V
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005