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SIR870ADP-T1-GE3
Power MOSFET, N Channel, 100 V, 60 A, 6600 µohm, PowerPAK SO, Surface Mount
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4990 件可于 1-2 個工作日後配送(新加坡 件庫存)
34408 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$82.080 |
| 10+ | NT$57.560 |
| 100+ | NT$41.210 |
| 500+ | NT$39.090 |
| 1000+ | NT$37.250 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$82.08
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIR870ADP-T1-GE3
訂購代碼2283692
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id60A
Drain Source On State Resistance6600µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
產品總覽
The SIR870ADP-T1-GE3 is a 100V N-channel TrenchFET® Power MOSFET. Suitable for use in primary side switching, telecom and DC/DC inverters applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
應用
Power Management, Industrial, Computers & Computer Peripherals
技術規格
Channel Type
N Channel
Continuous Drain Current Id
60A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6600µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
SIR870ADP-T1-GE3 的替代選擇
找到 3 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00012