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SIRA18DP-T1-GE3
Power MOSFET, N Channel, 30 V, 33 A, 7500 µohm, PowerPAK SO, Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$31.400 |
| 10+ | NT$19.830 |
| 100+ | NT$13.220 |
| 500+ | NT$10.280 |
| 1000+ | NT$8.510 |
| 5000+ | NT$6.710 |
價格Each
最少: 1
多項: 1
NT$31.40
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIRA18DP-T1-GE3
訂購代碼2364097
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id33A
Drain Source On State Resistance7500µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation14.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
產品總覽
N-channel 30V (D-S) MOSFET suitable for use in DC/DC conversion, battery protection, load switching and DC/AC inverters.
- TrenchFET® Gen IV power MOSFET
- 100% Rg and UIS tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
33A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
14.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
7500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.00012