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SIS412DN-T1-GE3
MOSFET, N-CH, 30V, 12A, POWERPAK8
27,594 有存貨
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27594 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$30.650 |
| 10+ | NT$19.040 |
| 100+ | NT$12.430 |
| 500+ | NT$9.550 |
| 1000+ | NT$9.130 |
| 5000+ | NT$8.750 |
價格Each
最少: 1
多項: 1
NT$30.65
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIS412DN-T1-GE3
訂購代碼1779238
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12A
Drain Source On State Resistance0.024ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation15.6W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The SIS412DN-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
應用
Power Management, Consumer Electronics, Computers & Computer Peripherals
技術規格
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
15.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000076