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SIS890DN-T1-GE3
Power MOSFET, N Channel, 100 V, 30 A, 0.0235 ohm, PowerPAK 1212, Surface Mount
13,052 有存貨
12,000 即日起您可預購補貨
13052 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$35.160 |
| 50+ | NT$31.100 |
| 100+ | NT$27.030 |
| 500+ | NT$23.410 |
| 1500+ | NT$19.870 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$175.80
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIS890DN-T1-GE3
訂購代碼2283693
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id30A
Drain Source On State Resistance0.0235ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
產品總覽
The SIS890DN-T1-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for telecom brick, primary side switch and synchronous rectification applications.
- 100% Rg tested
- 100% UIS tested
- Capable of operating with 5V gate drive
- Halogen-free
- -55 to 150°C Operating temperature range
應用
Industrial, Power Management, Communications & Networking
技術規格
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0235ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000089