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SIZF928DT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 248 A, 248 A, 530 µohm
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| 數量 | 價格 |
|---|---|
| 1+ | NT$78.280 |
| 10+ | NT$50.320 |
| 100+ | NT$34.540 |
| 500+ | NT$27.470 |
| 1000+ | NT$25.990 |
| 5000+ | NT$24.510 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$78.28
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SIZF928DT-T1-GE3
訂購代碼3765812
Product RangeTrenchFET Gen IV Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel248A
Continuous Drain Current Id P Channel248A
Drain Source On State Resistance N Channel530µohm
Drain Source On State Resistance P Channel530µohm
Transistor Case StylePowerPAIR
No. of Pins8Pins
Power Dissipation N Channel74W
Power Dissipation P Channel74W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCLead (21-Jan-2025)
產品總覽
Dual N-channel 30V (D-S) MOSFET I typically used in applications such as CPU core power, computer / server peripherals, POL, synchronous buck converter and telecom DC/DC.
- TrenchFET® Gen IV power MOSFET
- 100% Rg and UIS tested
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
248A
Drain Source On State Resistance P Channel
530µohm
No. of Pins
8Pins
Power Dissipation P Channel
74W
Product Range
TrenchFET Gen IV Series
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
248A
Drain Source On State Resistance N Channel
530µohm
Transistor Case Style
PowerPAIR
Power Dissipation N Channel
74W
Operating Temperature Max
150°C
Qualification
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Taiwan
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.001