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SQ1539EH-T1_GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 850 mA, 850 mA, 0.21 ohm
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5,684 有存貨
3,000 即日起您可預購補貨
5684 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$7.970 |
| 50+ | NT$7.180 |
| 100+ | NT$6.390 |
| 500+ | NT$5.800 |
| 1500+ | NT$5.690 |
價格Each (Supplied on Cut Tape)
最少: 5
多項: 5
NT$39.85
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SQ1539EH-T1_GE3
訂購代碼3470722
Product RangeTrenchFET Series
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel850mA
Continuous Drain Current Id P Channel850mA
Drain Source On State Resistance N Channel0.21ohm
Drain Source On State Resistance P Channel0.21ohm
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
850mA
Drain Source On State Resistance P Channel
0.21ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.5W
Product Range
TrenchFET Series
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
850mA
Drain Source On State Resistance N Channel
0.21ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
1.5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000002