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SQJ182EP-T1_GE3
Power MOSFET, N Channel, 80 V, 210 A, 5000 µohm, PowerPAK SO, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SQJ182EP-T1_GE3
訂購代碼3927788
Product RangeTrenchFET Gen IV Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id210A
Drain Source On State Resistance5000µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation395W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeTrenchFET Gen IV Series
QualificationAEC-Q101
SVHCLead (21-Jan-2025)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
210A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
395W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
5000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001