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SQJQ150E-T1_GE3
Power MOSFET, N Channel, 40 V, 233 A, 1900 µohm, PowerPAK, Surface Mount
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產品訊息
製造商VISHAY
製造商產品編號SQJQ150E-T1_GE3
訂購代碼3879362
Product RangeTrenchFET Gen IV Series
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id233A
Drain Source On State Resistance1900µohm
Transistor Case StylePowerPAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation187W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeTrenchFET Gen IV Series
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
233A
Transistor Case Style
PowerPAK
Rds(on) Test Voltage
10V
Power Dissipation
187W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
40V
Drain Source On State Resistance
1900µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000363