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SQW44N65EF-GE3
Power MOSFET, N Channel, 650 V, 47 A, 0.073 ohm, TO-247AD, Through Hole
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315 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$253.090 |
| 10+ | NT$190.310 |
| 100+ | NT$156.630 |
| 500+ | NT$153.500 |
| 1000+ | NT$150.370 |
價格Each
最少: 1
多項: 1
NT$253.09
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號SQW44N65EF-GE3
訂購代碼3765831
Product RangeE
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id47A
Drain Source On State Resistance0.073ohm
Transistor Case StyleTO-247AD
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation500W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeE
QualificationAEC-Q101
SVHCLead (07-Nov-2024)
產品總覽
E series power MOSFET with fast body diode is typically used in applications such as automotive on-board charger and automotive DC/DC converter.
- Fast body diode MOSFET using E series technology
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM): Ron x Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qr
- 175°C operating temperature
- AEC-Q101 qualified
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
技術規格
Channel Type
N Channel
Continuous Drain Current Id
47A
Transistor Case Style
TO-247AD
Rds(on) Test Voltage
10V
Power Dissipation
500W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.073ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
E
SVHC
Lead (07-Nov-2024)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (07-Nov-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536