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TN2404K-T1-GE3
Power MOSFET, N Channel, 240 V, 200 mA, 4 ohm, SOT-23, Surface Mount
產品訊息
製造商VISHAY
製造商產品編號TN2404K-T1-GE3
訂購代碼2295731
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds240V
Continuous Drain Current Id200mA
Drain Source On State Resistance4ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.65V
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The TN2404K-T1-GE3 is a 240VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers.
- Low ON-resistance
- 260V Secondary breakdown free
- Low power/voltage driven
- Low input and output leakage
- Excellent thermal stability
- Low offset voltage
- Full-voltage operation
- Easily driven without buffer
- Low error voltage
- No high-temperature “Run-away”
- Halogen-free
應用
Industrial, Power Management, Communications & Networking
技術規格
Channel Type
N Channel
Continuous Drain Current Id
200mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
360mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
240V
Drain Source On State Resistance
4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.65V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
TN2404K-T1-GE3 的替代選擇
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Israel
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000327