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TSHG8200
Infrared Emitter, 830 nm, 10 °, T-1 3/4 (5mm), 180 mW/Sr, 20 ns, 13 ns
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產品訊息
製造商VISHAY
製造商產品編號TSHG8200
訂購代碼1779682
Product RangeGaAlAs Double Hetero IR Diode
技術資料表
Peak Wavelength830nm
Angle of Half Intensity10°
Diode Case StyleT-1 3/4 (5mm)
Radiant Intensity (Ie)180mW/Sr
Rise Time20ns
Fall Time tf13ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.5V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product RangeGaAlAs Double Hetero IR Diode
MSL-
SVHCTo Be Advised
產品總覽
The TSHG8200 is an infrared, 830nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, moulded in a clear, untinted plastic package. It is suitable for use in infrared radiation source for operation with CMOS cameras (illumination), high speed IR data transmission and smoke-automatic fire detectors.
- Package form: T-1¾
- Dimensions (in mm): DIA 5
- Peak wavelength: 830nm
- High radiant intensity
- Angle of half intensity ±10°
- Low forward voltage
- Suitable for high pulse current operation
- High modulation bandwidth: fc = 18MHz
- Good spectral matching with CMOS cameras
技術規格
Peak Wavelength
830nm
Diode Case Style
T-1 3/4 (5mm)
Rise Time
20ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
10°
Radiant Intensity (Ie)
180mW/Sr
Fall Time tf
13ns
Forward Voltage VF Max
1.5V
Operating Temperature Max
85°C
Product Range
GaAlAs Double Hetero IR Diode
SVHC
To Be Advised
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85414100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:To Be Advised
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產品合規憑證
重量 (公斤)：.000322