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| 數量 | 價格 |
|---|---|
| 1+ | NT$102.100 |
| 10+ | NT$89.340 |
| 100+ | NT$74.030 |
| 500+ | NT$66.370 |
| 1000+ | NT$64.740 |
價格Each
最少: 1
多項: 1
NT$102.10
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產品訊息
製造商VISHAY
製造商產品編號VB60100C-E3/4W
訂購代碼2889263
Product RangeTMBS
技術資料表
Repetitive Peak Reverse Voltage100V
Average Forward Current60A
Diode ConfigurationDual Common Cathode
Diode Case StyleTO-263AB
No. of Pins3Pins
Forward Voltage Max790mV
Forward Surge Current320A
Operating Temperature Max150°C
Diode MountingSurface Mount
Product RangeTMBS
Qualification-
SVHCLead (25-Jun-2025)
產品總覽
VB60100C-E3/4W is a dual high voltage TMBS® (trench MOS barrier schottky) rectifier. Typical application includes for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
- Low forward voltage drop, low power losses
- High efficiency operation
- Low thermal resistance
- Maximum repetitive peak reverse voltage is 100V (TA = 25°C)
- Maximum average forward rectified current is 30A (TA = 25°C, per diode), IFSM is 30A (TA = 25°C)
- Non-repetitive avalanche energy at TJ = 25°C, L = 140mH per diode is 450mJ
- Peak repetitive reverse current at tp = 2μs, 1KHz, TJ = 38°C ± 2°C per diode is 1.0A (TA = 25°C)
- Voltage rate of change (rated VR) is 10000V/μs (TA = 25°C)
- Minimum breakdown voltage is 100V (IR = 1.0mA, TA = 25°C)
- TO-263AB package, operating junction and storage temperature range from -40 to +150°C
技術規格
Repetitive Peak Reverse Voltage
100V
Diode Configuration
Dual Common Cathode
No. of Pins
3Pins
Forward Surge Current
320A
Diode Mounting
Surface Mount
Qualification
-
Average Forward Current
60A
Diode Case Style
TO-263AB
Forward Voltage Max
790mV
Operating Temperature Max
150°C
Product Range
TMBS
SVHC
Lead (25-Jun-2025)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.09