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VSLY3850
Infrared Emitter, High Speed, 850 nm, 18 °, T-1 (3mm), 10 mW/Sr, 10 ns, 10 ns
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846 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$42.680 |
| 10+ | NT$30.920 |
| 25+ | NT$27.890 |
| 50+ | NT$24.860 |
| 100+ | NT$21.830 |
| 500+ | NT$19.050 |
價格Each
最少: 1
多項: 1
NT$42.68
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號VSLY3850
訂購代碼1870806
技術資料表
Peak Wavelength850nm
Angle of Half Intensity18°
Diode Case StyleT-1 (3mm)
Radiant Intensity (Ie)10mW/Sr
Rise Time10ns
Fall Time tf10ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.9V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (07-Nov-2024)
產品總覽
The VSLY3850 is a 850nm high speed Infrared Emitting Diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and moulded in a clear. It is suitable for high pulse current operation. It is suitable for use in infrared radiation source for operation with CMOS cameras, high speed IR data transmission, 3D TV application and light curtains.
- High speed
- High radiant power
- High radiant intensity
- ±18° Angle of half intensity
- Good spectral matching with CMOS cameras
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Peak Wavelength
850nm
Diode Case Style
T-1 (3mm)
Rise Time
10ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
18°
Radiant Intensity (Ie)
10mW/Sr
Fall Time tf
10ns
Forward Voltage VF Max
1.9V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Thailand
承擔產品生產最後程序之國家
關稅編號：85414100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (07-Nov-2024)
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重量 (公斤)：.000145