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713 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$20.360 |
| 10+ | NT$13.930 |
| 100+ | NT$10.080 |
| 500+ | NT$8.350 |
| 1000+ | NT$7.300 |
價格Each
最少: 5
多項: 5
NT$101.80
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商VISHAY
製造商產品編號VSML3710-GS18
訂購代碼2251604
技術資料表
Peak Wavelength940nm
Angle of Half Intensity60°
Diode Case StyleLCC
Radiant Intensity (Ie)9.5mW/Sr
Rise Time800ns
Fall Time tf800ns
Forward Current If(AV)100mA
Forward Voltage VF Max-
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification StandardAEC-Q100
Product Range-
MSL-
SVHCNo SVHC (07-Nov-2024)
產品總覽
High power infrared emitting diode, 940nm, GaAlAs MQW. It is suitable for use in IR emitter in photo interrupters, sensors and reflective sensors, IR emitter in low space applications, household appliance and tactile keyboards.
- AEC-Q101 qualified
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity = ±60°
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Peak Wavelength
940nm
Diode Case Style
LCC
Rise Time
800ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
AEC-Q100
MSL
-
Angle of Half Intensity
60°
Radiant Intensity (Ie)
9.5mW/Sr
Fall Time tf
800ns
Forward Voltage VF Max
-
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
關稅編號:85414100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (07-Nov-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤):.001633