VSMY2853G

VSMY2853G is a VSMY2853 series high speed infrared emitting diode. This is infrared, 850nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, moulded in clear, untinted plastic packages (with lens) for surface mounting (SMD). Application includes miniature light barrier, photo interrupters, optical switch, emitter source for proximity sensors, IR touch panels, IR illumination.

• High reliability, high radiant power
• Very high radiant intensity
• Angle of half intensity is ±28° (Tamb = 25°C)
• Suitable for high pulse current operation
• Terminal configurations gullwing or reverse gullwing
• 10ns typ fall time ( IF = 100mA, 10% to 90%), 50mW/sr typ radiant intensity IF = 100 mA, tp = 20 ms)
• 10ns typ rise time ( IF = 100mA, 10% to 90%), 850nm typ peak wavelength (IF = 100mA)
• 100mA forward current (Tamb = 25°C)
• Operating temperature range from -40 to +85°C
• Dimensions (L x W x H) is 2.3 x 2.3 x 2.55mm