WG40N120HFW1Q

WG40N120HFW1Q is an IGBT. It uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode. This device is part of the high speed series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converter. Typical applications include solar inverter, UPS, welding converters, PFC and mid to high switching frequency applications.

• High switching speed, EMI improved design
• Positive temperature efficient for easy parallel operating
• Very soft, fast recovery anti-parallel diode
• Collector-emitter breakdown voltage is 1200V min at VGE = 0V; IC = 1mA
• Diode forward voltage is 2.3V typ at VGE = 0V; IF = 40A; Tj = 25°C
• Zero gate voltage collector current is 250μA max at VCE = 1200V; VGE = 0V; Tj = 25°C
• Gate charge is 200nC typ at VCC = 960V; IC = 40A; VGE = 15V;Tj = 25°C
• Turn-off delay time is 126nS typ at Tj = 25°C;VCC = 600V; IC = 40A; VGE = 15V / 0V;RG = 3.6ohm
• TO247 package
• Maximum operating junction temperature is 175°C