ADRF5162BCPZN-R7

ADRF5162BCPZN-R7 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process. The device has a radio frequency (RF) input power handling capability of 45.5dBm average power and 50dBm peak power for the insertion loss path. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5162 requires no additional driver circuitry, which makes it an ideal alternative to GaN and PIN diode-based switches. Typical applications include military radios, radars, and electronic counter measures, cellular infrastructure, test and instrumentation, GaN and PIN diode replacement.

• No low frequency spurious
• Positive control interface: CMOS/LVTTL-compatible
• Frequency range from 0.4GHz to 8GHz
• Insertion loss is 0.6dB typ at 400MHz to 4GHz (between RFC and RF1/RF2 (ON))
• Isolation is 45dB typ at 400MHz to 4GHz (between RFC and RF1/RF2 (OFF))
• Rise and fall time is 200ns typ at 10% to 90% of RF output
• 24-lead frame chip scale package [LFCSP]
• Operating temperature range from -40°C to +105°C