HMC349AMS8GE

HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100MHz to 4GHz. The HMC349AMS8G operates with a single positive supply voltage from 3V to 5V and provides a CMOS-/TTL-compatible control interface. Application includes cellular/4G infrastructure, wireless infrastructure, mobile radios, test equipment.

• Nonreflective, 50 ohm design
• High isolation is 57dB to 2GHz, low insertion loss is 0.9dB to 2GHz
• High input linearity, high power handling
• 1dB power compression is 28dBm (typ, VDD = 3V, TCASE = 25°C)
• Third-order intercept is 54dBm (typ, VDD = 3V, TCASE = 25°C)
• 33.5dBm through path, 26.5dBm terminated path
• Single positive supply range from 3V to 5V
• CMOS-/TTL-compatible control, all off state control
• Frequency range from 0.1 to 4GHz (VDD = 3V to 5V, TCASE = 25°C)
• 8 lead MINI-SO-EP package, operating temperature range from -40°C to +125°C

附註

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