HMC407MS8GETR

HMC407MS8GE is a high efficiency GaAs InGaP heterojunction bipolar transistor (HBT) MMIC power amplifiers which operate between 5GHz and 7GHz. This amplifier requires no external matching to achieve operation and is thus truly 50 ohm matched at input and output. This amplifier provides 15dB of gain, +29dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. It is widely used in applications such as UNII, hiperLAN.

• Gain is 15dB typical at (TA = +25°C, Vs = 5V, Vpd = 5V)
• Gain variation over temperature is 0.025dB/ °C typ at (TA = +25°C, Vs = 5V, Vpd = 5V)
• Input return loss is 12dB typical at ( TA = +25°C, Vs = 5V, Vpd = 5V)
• Output return loss is 15dB typical at (, TA = +25°C, Vs = 5V, Vpd = 5V)
• Output power for 1dB compression is 25dBm typ at (TA = +25°C, Vs = 5V, Vpd = 5V)
• Output third order intercept is 37dBm typ at (TA = +25°C, Vs = 5V, Vpd = 5V)
• Noise figure is 5.5dB typ at (TA = +25°C, Vs = 5V, Vpd = 5V)
• Control current is 7mA typ at (Vpd = 5V, TA = +25°C)
• Switching speed is 30ns typ at (TA = +25°C, Vs = 5V, Vpd = 5V)
• Operating temperature is -40°C to +85°C, package style is 8-lead SMT

附註

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party