HMC7229LS6

HMC7229LS6 is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 1W power amplifier, with an integrated temperature compensated on-chip power detector that operates between 37 GHz to 40 GHz. With an excellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linear applications such as high capacity, point to point or multipoint radios or VSAT/SATCOM applications demanding 32dBm of efficient saturated output power. The radio frequency (RF) input/outputs are internally matched and dc blocked for ease of integration into higher level assemblies. Application includes point to point radios, point to multipoint radios, very small aperture terminal (VSAT) and satellite communications (SATCOM).

• Frequency range from 37 to 40GHz (TA=25°C, VDD1 to VDD4 (VDDx)=6V)
• Typical gain is 24dB (TA=25°C, VDD1 to VDD4 (VDDx)=6V)
• Typical gain variation over temperature is 0.058dB/°C (TA=25°C, VDD1 to VDD4 (VDDx)=6V)
• Return loss is 16dB (input)/14dB (output) at TA = 25°C, VDD1 to VDD4 (VDDx) = 6 V, IDD = 1200mA
• Output power for P1dB compression is 31.5dBm (TA=25°C, VDD1 to VDD4 (VDDx)=6V)
• Saturated output power is 32dBm (TA=25°C, VDD1 to VDD4 (VDDx)=6V)
• Typical output third order intercept (IP3) is 40dBm (TA=25°C, VDD1 to VDD4 (VDDx)=6V)
• Total supply current is 1200mA (TA=25°C, VDD1 to VDD4 (VDDx)=6V)
• 16-terminal LCC-HS package
• Temperature range from -40°C to +85°C

附註

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