HMC7950LS6

HMC7950LS6 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). Application includes test instrumentation and military and space.

• Output power for 1dB compression is 16.5dBm (typ, TA = 25°C, VDD = 5V, 2 to 5GHz)
• Saturated output power is 20.5dBm (typ, TA = 25°C, VDD = 5V, 2 to 5GHz)
• Output third-order intercept is 26.5dBm (typ, measurement taken at POUT/tone = 4dBm)
• Gain is 15.5dB (typ, TA = 25°C, VDD = 5V, VGG2 = open, 2 to 5GHz)
• Noise figure is 3.0dB (typ, TA = 25°C, VDD = 5 V, VGG2 = open, 2 to 5GHz)
• Return loss is 12dB (typ, input, TA = 25°C, VDD = 5V, 2 to 5GHz)
• Return loss is 13dB (typ, output, TA = 25°C, VDD = 5V, 2 to 5GHz)
• 16 terminal ceramic LCC-HS package, operating temperature range from -40°C to +85°C

附註

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