LT1160CS#PBF

LT®1160 is a cost effective half-bridge N-channel power MOSFET driver. The floating driver can drive the topside N-channel power MOSFETs operating off a high voltage (HV) rail of up to 60V. The internal logic prevents the inputs from turning on the power MOSFETs in a half-bridge at the same time. Its unique adaptive protection against shoot-through currents eliminates all matching requirements for the two MOSFETs. This greatly eases the design of high efficiency motor control and switching regulator systems. During low supply or start-up conditions, the undervoltage lockout actively pulls the driver outputs low to prevent the power MOSFETs from being partially turned on. The 0.5V hysteresis allows reliable operation even with slowly varying supplies. Typical applications are PWM of high current inductive loads, half-bridge and full-bridge motor control, synchronous step-down switching regulators, 3-phase brushless motor drive, high current transducer drivers, class D power amplifiers.

• Floating top driver switches up to 60V
• Drives gate of top N-channel MOSFET above load HV supply
• Adaptive nonoverlapping gate drives prevent shoot-through
• Top drive protection at high duty cycles, TTL/CMOS input levels
• Undervoltage lockout with hysteresis, separate top and bottom drive pins
• DC supply current is 15mA maximum (V+=15V, VINTOP=0.8V, VINBOTTOM=2V)
• Input current is 25µA max (VINTOP=VINBOTTOM=4V, TA=25°C,V+=VBOOST=12V, VTSOURCE=0V, CGATE =3000pF)
• 14-lead plastic SO package
• Commercial operating temperature range from 0°C to 70°C

附註

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