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IXFN64N60P
MOSFET Transistor, N Channel, 64 A, 600 V, 0.096 ohm, 10 V, 5 V
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產品訊息
製造商產品編號IXFN64N60P复制
訂購代碼1427328
技術資料表
Channel TypeN Channel
Continuous Drain Current Id64A
Drain Source Voltage Vds600V
Drain Source On State Resistance0.096ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation700W
Operating Temperature Max150°C
Product Range-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXFN64N60P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
- International standard package
- miniBLOC with aluminium nitride isolation
- UL94V-0 Flammability rating
- Unclamped inductive switching (UIS) rated
- Rugged polysilicon gate cell structure
- Low package inductance
- Easy to mount
- Space savings
- High power density
- Low RDS (ON) HDMOS™ process
應用
Power Management, Industrial, Motor Drive & Control, Lighting, Thermal Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
600V
Rds(on) Test Voltage
10V
Power Dissipation
700W
Product Range
-
SVHC
No SVHC (17-Jan-2023)
Continuous Drain Current Id
64A
Drain Source On State Resistance
0.096ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
150°C
MSL
-
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
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產品合規憑證
重量 (公斤)：.03